SSPA 8-12G 50W
- DESCRIPTION
- TECHNICAL
- SPECIFICATIONS
Introduction
* Ultra-wideband doubled frequency CW SSPA (GaAs Amplifier and GaN Amplifier)
* Higher linear characteristics SSPA (GaAs Amplifier and GaN Amplifier)
* Pulse wave SSPA (GaAs Amplifier and GaN Amplifier)
* Ka band KW PW / CW SSPA (GaAs Amplifier and GaN Amplifier)
* Q band 1~400 W CW SSPA(GaAs Amplifier and GaN Amplifier)
* Ultra-wideband doubled frequency traveling wave tube driver MPM
* Phased array Tx/Rx components
* V~W band SSPA (GaAs Amplifier and GaN Amplifier)
*THz frequency conversion, frequency doubling and amplifying module
Ability Description :
1、Experienced R&D engineer team;
2、Powerful RF design&simulation software and testing facility;
3、Customized L/S/C/X/ku/K/Ka/V/Q/W band SSPA;
4、Ultra wideband products is avaliable;
5、Ultra output power capacity is avaliable;
6、Meets for EMC(Electro Magnetic Compatibility) testing,Satellite communication,Radar system requirements;
7、CW SSPA (continous wave SSPA) and PW SSPA (pulse wave SSPA) is avaliable;
8、SSPA,SSPB,HPA, Power amplifier modules is avaliable;
9、Up converter modules is avaliable
High performance, high power, high efficiency, light weight, miniaturization and easy to use are the characteristics of our products, standardization and serialization are our goal.
8-12G 50W
Operating system: PW (50% max)
Application: missile-borne (-40~+50°C)
MTPF : ≥ 2000h ß
Peak Power: ≥47dBm
Power gain: ≥50dB
Small-signal gain: ≥60dB
Modulation depth:≥90dBc
Channel Efficiency: ≥25%
Output: Band/ Dual channel /same amplitude phase/Electrical switching
Size:160*45*19mm